Nexperia launches 1200V SiC MOSFETs with top-side cooling for thermal efficiency
Nexperia has launched new 1200V silicon carbide (SiC) MOSFETs in QDPAK packaging, designed to improve thermal performance in high-power applications through a top-side cooled design. This innovation aims to increase power density and efficiency, supporting applications such as data center power systems and EV charging infrastructure. The devices are available with various on-resistance options and in industrial-grade and automotive-qualified versions.
Key Takeaways
- Available in industrial and automotive-qualified versions with on-resistance (RDS(on)) options ranging from 17mΩ to 80mΩ.
- QDPAK packaging utilizes the X.PAK platform to provide a direct thermal path between the die and external heatsink.
- Integrated Kelvin source pin improves switching performance by reducing voltage ringing and electromagnetic interference.
- Design allows for independent management of thermal and electrical parameters, increasing power density in high-voltage systems.
Why It Matters
Nexperia is addressing the critical thermal bottleneck in high-density power conversion where traditional bottom-side cooling through the PCB limits performance. By offering a 3kW potential increase in power handling, these MOSFETs enable more compact and efficient power systems essential for AI data centers and 800V EV architectures. This launch intensifies the technical race among top-tier SiC players like Wolfspeed and Infineon, who are prioritizing advanced packaging to maximize wide-bandgap efficiency. Watch for adoption rates in automotive onboard chargers and industrial motor drives to signal a broader industry shift toward top-side cooling as a standard for high-voltage power management.
Additional Context
The SiC power semiconductor market is undergoing rapid expansion, with Mordor Intelligence projecting it will grow from $3.41 billion in 2026 to $10.26 billion by 2031. This growth is heavily concentrated, with five major companies—Infineon, STMicroelectronics, Wolfspeed, onsemi, and ROHM—controlling over 90% of global revenue as of 2024. Competition has sharpened around manufacturing scalability and performance metrics; notably, per Wolfspeed (June 2026), its fifth-generation SiC MOSFETs recently achieved a 27% reduction in specific on-resistance compared to existing 1200V solutions. This high-stakes environment is further complicated by geopolitical disruptions facing Nexperia itself. Per Sourceability (November 2025) and subsequent reports in January 2026, the company underwent a structural split into Dutch and Chinese entities following Dutch government intervention. This splintering has previously caused volatility in the automotive supply chain and led to warnings regarding the authenticity and qualification of components processed at specific sites. Despite these corporate challenges, Nexperia continues to leverage long-term technological partnerships, such as its 2023 collaboration with Mitsubishi Electric, to integrate high-voltage SiC technology into its discrete power device portfolio.
Read full article at newelectronics.co.uk
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